Heated gas-bearing backer

ABSTRACT

A gas-levitated substrate backing system includes a gas-levitating backer structure which is used for providing a non-contact force onto a surface of a substrate. The gas-levitating backer structure has an output face including three or more output openings. A gas source provides a gas flow through the output openings to levitate the gas-levitating backer structure over the surface of the substrate. The gas-levitating backer structure is freely moveable in a direction normal to the surface of the substrate.

CROSS-REFERENCE TO RELATED APPLICATIONS

Reference is made to commonly assigned, co-pending U.S. patentapplication Ser. No. 15/458,235, entitled “Modular thin film depositionsystem,” by Spath et al.; to commonly assigned, co-pending U.S. patentapplication Ser. No. 15/458,250, entitled “Deposition system with vacuumpre-loaded deposition head,” by Spath et al.; to commonly assigned,co-pending U.S. patent application Ser. No. 15/458,262, entitled “Dualgas bearing substrate positioning system,” by Spath; to commonlyassigned, co-pending U.S. patent application Ser. No. 15/458,270,entitled “Deposition system with moveable-position web guides,” by Spathet al.; to commonly assigned, co-pending U.S. patent application Ser.No. 15/458,287; entitled “Deposition system with repeating motionprofile,” by Spath et al.; to commonly assigned, co-pending U.S. patentapplication Ser. No. 15/458,297, entitled “Deposition system withmodular deposition heads,” by Spath et al.; to commonly assigned,co-pending U.S. patent application Ser. No. 15/458,307, entitled “Porousgas-bearing backer,” by Spath et al.; to commonly assigned, co-pendingU.S. patent application Ser. No. 15/458,322, entitled “Deposition systemwith interlocking deposition heads,” by Tutt et al.; and to commonlyassigned, co-pending U.S. patent application Ser. No. 15/458,335,entitled “Vertical system with vacuum pre-loaded deposition head,” bySpath et al., each of which is incorporated herein by reference.

FIELD OF THE INVENTION

This invention generally relates to systems including a gas bearingbacker used to manage the backside of a substrate, more particularly tosystems for the deposition of thin-film materials using a heatedgas-bearing backer.

BACKGROUND OF THE INVENTION

There is a growing interest in depositing thin-film materials fromgaseous precursors on a wide range of substrates for a wide variety ofapplications. Substrates of interest include both rigid substrates, suchas flat-panel glass, and flexible substrates, such as plastic webs ormetal foils. Flexible supports are of particular interest since they canbe more mechanically robust, lighter weight, and allow for more economicmanufacturing (e.g., by enabling roll-to-roll processing) than rigidsubstrates. Thin-film deposition systems, similar to their liquidcoating counterparts, are advantaged if the deposition head, or gasdelivery device, is smaller in area than the area of the substrate to becoated. For substrates that are continuous, such as webs and foils, theuse of a deposition head that is smaller than the area of the substrateis a requirement not just an advantage.

Among the techniques widely used for thin-film deposition is chemicalvapor deposition (CVD), which uses chemically reactive molecules thatreact to deposit a desired film on a substrate. Molecular precursorsuseful for CVD applications comprise elemental (atomic) constituents ofthe film to be deposited and typically also include additional elements.CVD precursors are volatile molecules that are delivered, in a gaseousphase, to a chamber in order to react at the substrate, forming the thinfilm thereon. The chemical reaction deposits a thin film with a desiredfilm thickness.

Atomic layer deposition (ALD) is a thin-film deposition technology thatprovides excellent thickness control of conformal thin-films. The ALDprocess segments the thin-film deposition process of conventional CVDinto single atomic-layer deposition steps. Advantageously, ALD steps areself-terminating and can deposit one atomic layer when conducted up toor beyond self-termination exposure times. An atomic layer typicallyranges from about 0.1 to about 0.5 molecular monolayers, with typicaldimensions on the order of no more than a few angstroms. In ALD,deposition of an atomic layer is the outcome of a chemical reactionbetween a reactive molecular precursor and the substrate. In eachseparate ALD reaction-deposition step, the net reaction deposits thedesired atomic layer and substantially eliminates “extra” atomsoriginally included in the molecular precursor. In its most pure form,ALD involves the adsorption and reaction of each of the precursors inthe absence of the other precursor or precursors of the reaction. Intemporal vacuum ALD, thin-film growth is accomplished by alternating thedelivery of two or more reactive materials, or precursors, into a vacuumchamber in time. Sequentially, a first precursor is applied to reactwith the substrate, the excess of the first precursor is removed, and asecond precursor is then applied to react with the substrate surface.The excess of the second precursor is then removed and the process isrepeated. In all ALD processes, the substrate is exposed sequentially toa series of reactants that react with the substrate and are keptisolated from each other to avoid CVD or gas phase reactions. An ALDcycle is defined by the steps required to form a single layer of theoverall thin-film material; for a process using two precursors a cycleis defined as the first precursor exposure, a purge step, the secondprecursor exposure, and a second precursor purge step.

A version of ALD processes known as spatial atomic layer deposition(SALD) employs a continuous (as opposed to pulsed) gaseous materialdistribution from a deposition head. As distributed from the depositionhead, the gaseous precursors are separated in space by the flow of aninert gas, rather than being separated in time. While vacuum chamberscan be used with SALD, they are no longer necessary due to the physicalseparation of the gas flows rather than a temporal separation of theprecursors within a single chamber. In SALD systems, the requiredsequential exposures are accomplished by relative movement between thesubstrate and the delivery head such that any given point on thesubstrate sees the necessary sequence of gaseous materials. Thisrelative movement can be accomplished by moving a substrate relative toa fixed delivery head, moving a delivery head with respect to a fixedsubstrate, or moving both the delivery head and the substrate in orderto achieve the desired gas exposure at the substrate. Exemplary SALDprocesses, are described in commonly-assigned U.S. Pat. Nos. 7,413,982,7,456,429, 7,789,961, and U.S. Patent Application Publication2009/0130858, the disclosures of which are incorporated herein byreference. SALD enables operation at atmospheric or near-atmosphericpressures and is capable of operating in an unsealed or open-airenvironment, making it compatible with web coating.

SALD offers considerable promise as a technique for thin film depositionon a range of substrates. However, in spite of its inherent technicalcapabilities and advantages, a number of technical hurdles still remain.As in all ALD processes, the thickness of the SALD deposited thin-filmis controlled by the number of ALD cycles to which the substrate isexposed, where a cycle is defined by the exposure of the substrate tothe minimum required reactant and purge gas flows to form the desiredthin-film composition. Due to the process being limited to an atomiclayer of growth per cycle, repeated cycles are required to deposit athin-film having an appreciable thickness. In order to effectivelyachieve repeated cycles, SALD requires either motion of the substratepast the deposition head or the development of complex equipment suchthat the delivery head moves with its gas connections, relative to thesubstrate. Thin-films of appreciable thickness can be accomplished byeither 1) using a deposition head containing a sufficient number of gasdistribution cycles and moving a substrate (or head) in a unidirectionalmotion relative to the head (or substrate) or 2) using a head with alimited number of cycles and using relative reciprocating motion. Ininstances where the substrate or the deposition head are moved by areciprocating movement, there remains a technical challenge to managethe sequence of gas exposures since the substrate can be exposed to thegases in a different sequence during a forward stroke and a backwardstroke. Furthermore, in order to deposit a thin-film over an entiresubstrate, the substrate or the head may have to travel a long distancein order to expose substrate to the process gases. There remains a needto provide alternative arrangements to both the very large depositionheads and long distance motion profiles such that large substrates maybe easily coated.

One alternative to a single large deposition head is to use multipledeposition heads, or modules, within a larger deposition section.Commonly-assigned U.S. Pat. No. 8,182,608 (Kerr et al.), which isincorporated herein by reference, relates to an apparatus formaintaining the alignment or positional relationship between at leasttwo modules in an SALD system. U.S. Pat. No. 8,182,608 describesaligning multiple delivery heads in a 1-D array, addressing the abilityto coating longer substrates or provide thicker thin-film coatings.While simplifying the manufacturing of the deposition head, it does notaddress the challenge of making coatings of different thicknesses usingthe same tool, or the footprint required for providing a largedeposition section in a manufacturing environment. Additionally, thereremains a need for a way to arrange modular heads to be able to coatwider substrates without coating defects or non-uniformity.Additionally, there remains a need for a motion profile that enables theuse of small deposition heads in order to build up a sufficient layerthickness from an SALD. Furthermore, there remains a need for asubstrate handling means for coating on roll-to-roll webs that enablesexposure of the substrate to multiple SALD cycles during deposition,while simultaneously moving the substrate smoothly from the feed roll tothe take-up roll.

In order to function properly, an SALD system must maintain theseparation of the reactant gases. Although separated in space and by apurge gas as delivered by the deposition head, the system must befurther designed to insure that the gases do not mix in the regionbetween the deposition head and the substrate. Commonly-assigned U.S.Patent Application Publication 2009/0130858 (Levy), relates to an SALDdeposition system and method using a delivery head where the distancebetween the substrate and the deposition head is maintained by gaspressure. In this device, the pressure of flowing reactive and purgegases is used as a means to control the separation between thedeposition head and the substrate. Due to the relatively large pressuresthat can be generated in such a system, gases are forced to travel inwell-defined paths and thus eliminate undesired gas intermixing.

The system of U.S. Patent Application Publication 2009/0130858 operatesas a gas-bearing SALD system. The gas bearing operation maintains aclose proximity of the substrate to the deposition head, and either thesubstrate or head must be free to move in the direction normal thedeposition head. The use of a gas bearing SALD head is advantaged due tothe resultant pressure profiles that separate the precursor gasses bythe purge gas and prevent undesired gas intermixing. There remains aneed for SALD systems that utilize a gas-bearing deposition head to coatlarge substrates, particularly for depositions systems with smallmanufacturing footprints. There remains a need to coat long substrateswith deposition heads that are considerably smaller than the coatinglength, both for piece-parts and particularly for roll-to-roll webs;this need further necessitates novel motion control profiles andsubstrate handling. There remains a further need for roll-to-roll SALDsystems that utilize a gas-bearing deposition head having a simpleconstruction, as well as roll-to-roll systems that can manage potentialsubstrate distortions and can isolate the motion needed for depositionfrom the global motion of the web through the system. Additionally,there remains a need, for a modular system that can accommodatedifferent substrate form factors, including roll-to-roll webs ofsubstrate, and provide a system that is relatively low in cost and easyto use.

SUMMARY OF THE INVENTION

The present invention represents a gas-levitated substrate backingsystem for providing heat and a non-contact force onto a surface of asubstrate, including:

a gas-levitating backer structure having an output face, wherein theoutput face includes three or more output openings;

a gas source for providing a gas flow through the output openings; and

a heater for heating the gas-levitating backer structure;

wherein the gas-levitating backer structure is freely moveable in adirection normal to the surface of the substrate.

The gas-bearing backer of the present invention has the advantage thatit provides a substantially constant non-contact force onto the surfaceof the substrate. The gas-levitating backer structure includes a heaterto elevate the temperature of the substrate without contacting thesubstrate. This heated gas-levitating backer structure of the presentinvention provides heat energy without the turbulent forces or wasteheat exhaust issues associated with convective heating methods. Theheated gas-levitating backer structure can be operated at lower unittemperature than a radiant heater to achieve the equivalent heat flux tothe substrate which is important for safety/structural considerations.Furthermore, the heated gas-levitating backer structure of the presentinvention enables a more compact design with a lower mass than radiantheater approaches.

It is an advantage of the present invention that the backside-gapbetween the heated gas-levitating backer structure and the substrate isvery small, such that there is conductive heat transfer across thelevitating gas film, which is an effective means of heat transfer. It isan advantage that energy to heat the heated gas-levitating backerstructure can be provided in a non-contact, non-bias-force producingmeans, keeping the mass of the heated gas-levitating backer structurelow.

It has the further advantage that it is continuously self-adjusting andis able to maintain a consistent thermal gap for a wide range ofsubstrates having thickness variations that are significantly largerthan the desired thermal gap.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is schematic block diagram showing the functional elements of anSALD deposition system;

FIGS. 2A-2C are cross-sectional side views of SALD deposition headsuseful in the present invention having a single ALD cycle;

FIG. 3A is a cross-sectional side view of an alternative embodiment ofan SALD deposition head having 1.5 ALD cycles;

FIG. 3B is a plan view of the SALD head of FIG. 3A;

FIG. 4 is a cross-sectional view of a prior art system illustrating thedeformation of a flexible substrate positioned above a deposition headhaving a net positive pressure profile;

FIG. 5 is a cross-sectional view of a prior art system illustrating thedeformation of a flexible substrate positioned above a deposition headhaving a variable pressure profile;

FIG. 6 is a cross-sectional view of a prior art system with a depositionhead having a net positive pressure profile and a matching gas-bearingbacker;

FIG. 7 is a cross-sectional view of a prior art system with a depositionhead having a net variable pressure profile and a matching gas-bearingbacker;

FIG. 8 illustrates a system including a deposition head and agas-bearing backer with a flexible substrate in accordance with anexemplary embodiment;

FIG. 9 illustrates a system including a deposition head and agas-bearing backer with a rigid substrate in accordance with anexemplary embodiment;

FIG. 10 illustrates a system including a deposition head and agas-bearing backer with a flexible substrate positioned in a verticalorientation in accordance with an exemplary embodiment;

FIG. 11 illustrates an exemplary gas-bearing backer configuration;

FIG. 12 illustrates a comparative example using a vacuum backer;

FIG. 13 illustrates a calculated pressure distribution for a gas-bearingbacker corresponding to Inventive Example #1;

FIG. 14 illustrates calculated pressure distributions for gas-bearingbackers corresponding to Inventive Examples #2-5;

FIG. 15 illustrates calculated pressure distributions for gas-bearingbackers corresponding to Inventive Examples #6-9;

FIG. 16 illustrates calculated pressure distributions for gas-bearingbackers corresponding to Inventive Examples #10-11;

FIG. 17 is a cross-sectional view of an exemplary gas-bearing backerincluding a porous material layer having a rib structure;

FIG. 18 is a cross-sectional view of an exemplary gas-bearing backerincluding a porous material layer having a rib structure and ventgrooves;

FIG. 19 is a cross-sectional view of an exemplary gas-bearing backerincluding a porous material layer having a rib structure and impermeablevent grooves;

FIGS. 20A and 20B illustrate a method for applying an impermeablecoating to vent grooves in a porous material layer;

FIG. 21A is a bottom-side sectional-view of a gas-bearing backer havinga diamond grid pattern on the output face;

FIG. 21B is a top-side sectional-view of the gas-bearing backer of FIG.21A showing internal support ribs, grooves and blind holes on the sideopposite the output face;

FIGS. 22A and 22B are cross-sectional views of exemplary systemsincluding a deposition head and a gas-bearing backer wherein flexuresare used to provide a lateral constraint for the gas-bearing backer; and

FIGS. 23A-23B illustrates a non-porous gas-bearing backer according toan alternate embodiment.

It is to be understood that the attached drawings are for purposes ofillustrating the concepts of the invention and may not be to scale.Identical reference numerals have been used, where possible, todesignate identical features that are common to the figures.

DETAILED DESCRIPTION OF THE INVENTION

Throughout the specification and claims, the following terms take themeanings explicitly associated herein, unless the context clearlydictates otherwise. The meaning of “a,” “an,” and “the” includes pluralreference, the meaning of “in” includes “in” and “on.” Additionally,directional terms such as “on,” “over,” “top,” “bottom,” “left,” and“right” are used with reference to the orientation of the figure(s)being described. Because components of embodiments of the presentinvention can be positioned in a number of different orientations, thedirectional terminology is used for purposes of illustration only and isin no way limiting.

The invention is inclusive of combinations of the embodiments describedherein. References to “a particular embodiment” and the like refer tofeatures that are present in at least one embodiment of the invention.Separate references to “an embodiment” or “particular embodiments” orthe like do not necessarily refer to the same embodiment or embodiments;however, such embodiments are generally not mutually exclusive, unlessso indicated or as are readily apparent to one of skill in the art. Theuse of singular or plural in referring to the “method” or “methods” andthe like is not limiting. It should be noted that, unless otherwiseexplicitly noted or required by context, the word “or” is used in thisdisclosure in a non-exclusive sense. Even though specific embodiments ofthe invention have been described herein, it should be noted that thepresent invention is not limited to these embodiments. In particular,any features described with respect to one embodiment may also be usedin other embodiments, where compatible. The features of the differentembodiments can be exchanged, where compatible.

It is to be understood that elements not specifically shown, labeled, ordescribed can take various forms well known to those skilled in the art.In the following description and drawings, identical reference numeralshave been used, where possible, to designate identical elements. It isto be understood that elements and components can be referred to insingular or plural form, as appropriate, without limiting the scope ofthe invention.

The example embodiments of the present invention are illustratedschematically and are not to scale for the sake of clarity. One ofordinary skill in the art will be able to readily determine the specificsize and interconnections of the elements of the example embodiments ofthe present invention. Therefore, the provided figures are not drawn toscale but are intended to show overall function and the structuralarrangement of some embodiments of the present invention.

The embodiments of the present invention relate to components forsystems useful for thin-film deposition. In preferred embodiments, thethin-film deposition is done using a spatial atomic layer deposition(SALD) process. For the description that follows, the term “gas” or“gaseous material” is used in a broad sense to encompass any of a rangeof vaporized or gaseous elements, compounds, or materials. Other termsused herein, such as: reactant, precursor, vacuum, and inert gas, forexample, all have their conventional meanings as would be wellunderstood by those skilled in the materials deposition art. Reactantgas flows can include multiple reactive species together with inertgaseous species. In some embodiments, the reactive gases can include areactive plasma, such as supplied by a remote plasma source. One type ofremote plasma source that can be used includes a surface dielectricbarrier discharge source. As such, plasma-enhanced spatial ALD (PE-SALD)arrangements are considered to be useful in some embodiments. While theexemplary embodiments are described in the context of SALD systems,those skilled in the art will recognize that aspects of the presentinvention can also be used for any application which involves exposing asubstrate to one or more gaseous substances, such as chemical vapordeposition processes.

Unless otherwise explicitly noted or required by context (for example,by the specified relationship between the orientation of certaincomponents and gravity), the term “over” generally refers to therelative position of an element to another and is insensitive toorientation, such that if one element is over another it is stillfunctionally over if the entire stack is flipped upside down. As such,the terms “over”, “under”, and “on” are functionally equivalent and donot require the elements to be in contact, and additionally do notprohibit the existence of intervening layers within a structure. Theterm “adjacent” is used herein in a broad sense to mean an element nextto or adjoining another element. The figures provided are not drawn toscale but are intended to show overall function and the structuralarrangement of some embodiments of the present invention.

Embodiments of the present invention are illustrated and described witha particular orientation for convenience; and unless indicatedspecifically, such as by discussion of gravity or weight vectors, nogeneral orientation with respect to gravity should be assumed. Forconvenience, the following coordinate system is used: the z-axis isperpendicular to the output face of the deposition head, the x-axis isparallel to the primary motion direction (in the plane of the outputface), and the y-axis is perpendicular to the primary motion axis (inthe plane of the output face). Roll, pitch, and yaw are as used hereinhave their commonly understood definitions. To facilitate interpretationof relative motion and degrees of freedom, the following clarificationsare provided. Roll is the rotation about an axis parallel to the primarymotion axis (x-axis). Pitch is the rotation about the y-axis in theplane of the output face of the delivery device and perpendicular to theprimary motion axis. Yaw is the rotation about the z-axis which isnormal to the output face of the delivery device.

An ALD process accomplishes thin-film growth on a substrate by thealternating exposure of two or more reactive materials, commonlyreferred to as precursors, either in time or space. A first precursor isapplied to react with the substrate. The excess of the first precursoris removed and a second precursor is then applied to react with thesubstrate surface. The excess of the second precursor is then removedand the process is repeated. In all ALD processes, the substrate isexposed sequentially to a series of reactants that react with thesubstrate. The thickness of the ALD (and SALD) deposited thin-films iscontrolled by the number of ALD cycles to which the substrate isexposed, where a cycle is defined by the exposure to the minimumrequired reactant and purge gas flows to form the desired thin-filmcomposition. For example, in a simple design, a single cycle can provideone application of a first reactant gaseous material G1 and oneapplication of second reactant gaseous material G2. In order toeffectively achieve repeated cycles, SALD requires either motion of thesubstrate past the deposition head or the development of complexequipment such that the delivery head with its gas connections, can bemoved relative to the substrate. Thin-films of appreciable thickness canbe accomplished by either 1) using a deposition head containing asufficient number of gas distribution cycles and moving the substrate(or the deposition head) in a unidirectional motion relative to thedeposition head (or substrate) or 2) using a deposition head with alimited number of cycles and using relative reciprocating motion.

In order to effectively use an SALD deposition head for thin-filmdeposition, it is commonly employed within a larger SALD system, orapparatus. Typically, such systems are specifically designed to depositthin films on a particular type of substrate (for example, either rigidor flexible). Furthermore, SALD systems typically utilize a singularmotion profile type that is chosen as a result of the design of thedeposition head and the type of substrate being coated. In many cases,SALD systems are further designed for a specific application, and assuch are configured to coat a single material at a given thickness on asubstrate having a particular form factor.

As known by one skilled in the art, each SALD system requires at leastthree functional elements in order to effectively deposit a thin-film,namely a deposition unit, a substrate positioner and a means of relativemotion. To date, the specific design of each functional element hasgenerally differed from system to system. As will be described,preferred embodiments of the SALD systems of the present invention aremodular in nature, and as such includes a range of components ofdiffering design that can be exchanged to perform the function of aparticular functional element within the novel SALD platform. The designand advantages of specific components useful in a range of SALD systems,and design and advantages of inventive elements and configurations ofthe novel modular SALD platform of the present invention will be betterunderstood with respect to the Figures.

As shown in schematic block diagram of FIG. 1, SALD system 200 of thepresent invention is preferably one in which a substrate 97 is movedrelative to a fixed deposition unit 210. As such, substrate 97 ispositioned over the output face 134 of a deposition unit 210 bysubstrate positioner module 280, and relative motion between thesubstrate 97 and the deposition unit 210 is accomplished by motion ofthe substrate positioner module 280 using relative motion means 270,which can also be referred to as a motion controller or a motion controlmeans. The deposition unit 210, substrate positioner module 280 andrelative motion means 270 are functional elements of depositionsubsystem 205 of SALD system 200. In various embodiments of the presentinvention, the deposition unit 210 can be a single deposition head 30 orcan be a deposition unit that include an array of deposition heads 30.The relative motion means 270 interacts with the substrate positionermodule 280 to move the substrate 97 relative to the deposition unit 210.

The substrate positioner module 280 is preferably an interchangeablesubstrate positioning module, with the modular system having multiplesubstrate positioning modules that can be easily exchanged into the SALDsystem 200, where the different substrate positioning modules areconfigured to handle different types of substrates 97 and differentsubstrate form factors.

Many types of substrates can be coated with the SALD system 200. Thesubstrates 97 used in the present invention can be any material thatacts as a mechanical support for the subsequently coated layers. Thesubstrate 97 can include a rigid material such as glass, silicon, ormetals. The substrate can also include a flexible material such as apolymer film or paper. Useful substrate materials include organic orinorganic materials. For example, the substrate can include inorganicglasses, ceramic foils, and polymeric materials. The thickness ofsubstrate 97 can vary, typically from about 25 μm to about 1 cm. Using aflexible substrate 97 allows for roll processing, which can becontinuous, providing economy of scale and economy of manufacturingrelative to flat or rigid supports.

In some example embodiments, the substrate 97 can include a temporarysupport or support material layer, for example, when additionalstructural support is desired for a temporary purpose, e.g.,manufacturing, transport, testing, or storage. In these exampleembodiments, the substrate 97 can be detachably adhered or mechanicallyaffixed to the temporary support. For example, a flexible polymericsupport can be temporarily adhered to a rigid glass support to provideadded structural rigidity during the deposition process. The glasssupport can be removed from the flexible polymeric support aftercompletion of the manufacturing process. The substrate 97 can be bareindicating that it contains no substantial materials on its surfaceother the material from which it is composed. The substrate 97 caninclude various layers and patterned materials on the surface.

The relative motion means 270 is adapted to connect to theinterchangeable substrate positioner modules, and as such, the relativemotion means 270 and the interchangeable substrate positioner modulespreferably contain appropriate mating features. The substrate positionermodule 280 is designed to position the substrate 97 in the x- andy-directions relative to the output face 134 of the deposition unit 210.The SALD system 200 may also include a secondary substrate positioner(not shown) which is designed to control the position of the substrate97 in the z-direction.

In various configurations, the substrate 97 can be attached to a backerdevice during deposition. The backer device can be used as heat sourcefor the substrate, or to stiffen otherwise flexible substrates. A backerthat is temporarily attached to the substrate, by vacuum for example, isintended to move with the substrate during relative motion between thesubstrate and a fixed deposition head. The backer attachment can providegreatly increased rigidity and flatness to flexible substrates. A backerdevice useful in the present invention can be larger than the substrate,as might be used to stabilize piece-parts of flexible substrate orapproximately the same size as the substrate, or significantly smallerthan the substrate when the substrate is rigid and self-supporting. Asused herein, the “substrate unit” refers to either the substrate 97alone or a substrate 97 with an attached backer device; the substrateunit has relative motion relative to the deposition unit 210.

The deposition unit 210 can use any type of SALD deposition head that isknown in the art. FIGS. 2A-2C illustrate deposition heads 30 that areconfigured to simultaneously supply a plurality of gaseous materialsfrom the output face in different gas zones within a deposition zone305. In all three figures, the deposition zone 305 contains thenecessary gas zones for a single two-step ALD deposition cycle. Movingfrom left to right within the deposition zone 305, there is a firstreactive gas zone 313 (G1) followed by an inert gas purge zone 314 (P),and a second reactive gas zone 315 (G2). As the relative motion means270 (FIG. 1) moves the substrate 97 relative to the deposition head 30(the x-direction being the primary motion direction as indicated bymotion arrow 98), a particular location on the substrate 97 sees theabove sequence of gases which results in ALD deposition. Depositionheads 30 of the present can include a deposition zone 305 with gas zonesfor any number of ALD deposition cycles, the single ALD cycleillustrated is for clarity of understanding.

The SALD systems of the present invention can use any deposition headgeometry so long it has the required gas delivery to form gas zonesbetween the deposition head 30 and the substrate 97 in the requiredorder to accomplish an ALD cycle, as illustrated by the simplifieddeposition head 30 of FIG. 2A. In preferred embodiments, the reactivegases (G1 and G2, for example) have little or no intermixing to avoid aCVD component during film deposition or gas phase reactions. The purgezone 314 (P) serves to separate the reactive gases G1, G2 and allows forthe removal of any reaction byproducts from the substrate surface as itmoves through the purge zone 314.

A single deposition cycle (moving from left to right) is defined by aninert gas flow I, followed by a first reactive gas flow G1, followed byan inert purge gas flow P, and lastly by a second reactive gas flow G2.The deposition zone 305 has a deposition zone length that spans thedistance from the start of the first reactive gas zone to the end of thelast reactive gas zone (e.g., from the first reactive gas zone 313 tothe second reactive gas zone 315 in FIG. 2A).

The deposition heads 30 illustrated in FIGS. 2A-2C, have extended inertzones 308, 309 on either side of the deposition zone 305. The firstinert zone 308 has a first inert zone length that spans the distancefrom the left edge 321 of the deposition head 30 to the boundary of thefirst reactive gas zone 313. The second inert zone 309 has a secondinert zone length that spans the distance from the boundary of thesecond reactive gas zone 315 to the right edge 322 of the depositionhead 30. The extended inert zones 308, 309 isolate the deposition zone305 from the external environment 15 and enable the deposition head 30to coat substrates 97 that are substantially longer than the length ofthe deposition head 30 without exposing the growth region to theexternal environment 15. Deposition heads of the prior art are typicallyoperated within a larger system where the external environment iscontrolled to be inert, under vacuum, or both. In preferred embodimentsof the present invention, the deposition head 30 can be used atatmospheric pressure without any additional environmental controls forthe external environment 15. One of the advantages of the presentinvention is that the deposition head 30 and SALD system 200 containingit can be used to coat on substrates 97 whose length is much larger thanthe length of the deposition zone 305. A further advantage of someembodiments of the present invention is the ability to control theenvironment of the region of the substrate being actively coated duringdeposition. Additionally, the relatively small deposition head sizeallows for lower cost manufacturing of the deposition head.

It is known that ALD is self-limiting, meaning that when all availablesites on a substrate surface have reacted with a precursor there is nofurther reaction during that half-step. When both half-reactions in adeposition cycle have sufficient time and available precursor to reachthis state, it is said that the ALD cycle has reached “saturation”. ALDdepositions done in these conditions are by definition, saturated ALD,and continued exposure to the precursors does not change significantlythe deposition amount. In SALD, the substrate velocity and length ofreaction zones determine the exposure time to a give precursor. For agiven velocity, there is a minimum zone length required to reachsaturation (i.e., a “saturation length”) and zone lengths longer thanthe saturation length do not add film thickness during materialdeposition. SALD systems of the present invention can be used in bothsaturated and sub-saturated conditions. One advantage of the presentinvention is that sub-saturated growth can still be deterministic, sinceeach point on the substrate 97 will see the same concentration ofprecursors for a time which is set by the substrate velocity and motionprofile.

The motion arrow 98 indicates one known motion of the substrate 97useful in SALD which is to move the substrate 97 in a smoothoscillating, or reciprocating, motion through the entire deposition zone305 such that the substrate “sees” the required number of cycles toproduce the desired coating thickness (as discussed above). In preferredembodiments of the present invention the substrate motion is controlledsuch that the region being actively coated is prevented fromexperiencing the external environment during coating. This has theadvantage of avoiding contamination of the thin-films during growth bypreventing exposure to any reactive species or dust particulates orother contaminates that may be present in the external environmentoutside of the controlled environment defined by the region between thedeposition head 30 and the substrate 97.

The deposition head 30 of FIG. 2B illustrates an embodiment where one ormore of the gas zones use a transverse arrangement, such as thatdisclosed in the aforementioned commonly-assigned U.S. Pat. No.7,456,429 (Levy et al.), entitled “Apparatus for atomic layerdeposition.” In a transverse flow arrangement, the flow of gases duringdeposition is orthogonal, or transverse, to the direction of substratemotion and is exhausted either out the edges of the deposition head 30,or into exhaust slots along the perimeter of the deposition head 30. Asillustrated, the deposition head 30 has gas slots 110 (i.e., outputslots 112) that are configured to supply the gases into theircorresponding gas zones. In other embodiments, the deposition head 30provides gas to the elongated parallel gas zones through an array oforifices, rather than through the illustrated output slots 112(elongated channels).

The deposition head 30 of FIG. 2C illustrates a preferred gas bearingdeposition head 30 of the present invention. The principles and designof gas bearing deposition heads 30 has been described in detail in theaforementioned U.S. Patent Application Publication 2009/0130858, as wellas in commonly-assigned U.S. Pat. No. 7,572,686 (Levy et al.) andentitled “System for thin film deposition utilizing compensatingforces.” As shown in FIG. 2C, an exemplary deposition unit 210 includesa deposition head 30 that operates on a vacuum-preloaded gas bearingprinciple having an output face 134 (facing upward) having gas slots 110which provide gases into the gas zones and exhaust gases from the gaszones. Gases are provided into the gas zones by spatially separatedelongated output slots 112 (extending in the y-direction). Each gas zoneincludes a corresponding output slot 112. Adjacent exhaust slots 114remove (or exhaust) gas from the gas zones. The exhaust slots 114 arepositioned to define the boundaries of the various gas zones. Asillustrated, the gas zones are equivalent to those of FIGS. 2A and 2B.

In these preferred embodiments wherein the deposition head 30 operatesusing a gas bearing principle the substrate 97 is positioned above theoutput face 134 of the deposition head 30 and is maintained in closeproximity to the output face 134 by an equilibrium between the pull ofgravity, the flow of the gases supplied to the output face 134 throughthe output slots 112, and a slight amount of vacuum at the exhaust slots114. While the gas openings in this example are gas slots 110 (alsoreferred to as gas channels) that extend in the y-direction, one skilledin the art will recognize that the gas openings could also have othergeometries, such as a row of nozzles or circular orifices, so long asthe proper gases are delivered into and exhausted from the gas zonesbetween the deposition head and the substrate.

As shown in FIG. 2C, the gases are introduced and exhausted inalternating output slots 112 and exhaust slots 114 in the output face134 of the deposition head 30. The flow of gases between the outputslots 112 during deposition is primarily in the direction of substratetravel (forward and backward) toward the adjacent exhaust slots 114. Asdiscussed earlier, the region that spans the reactive gas zones can bereferred to as the deposition zone 305, which is preferably surroundedby two inert zones 308, 309. The individual gas zones within thedeposition zone 305, where the substrate 97 is exposed to each gas,generally extend outward from the corresponding output slot 112 to thetwo adjacent exhaust slots 114 as illustrated for the first reactive gaszone 313, the purge zone 314, and the second reactive gas zone 315. Inthe illustrated configuration, the extended inert zones 308, 309 extendfrom the inert gas output slots 112 to the edges of the deposition head30. In alternative embodiments, the extended inert zones 308, 309 caninclude additional output slots 112 or other gas supply features.Additionally, the extended inert zones 308, 309 can include exhaustslots 114, or other exhaust features, to provide additionalprotection/separation from the external environment 15.

Using any of the embodiments of deposition head 30 of FIGS. 2A-2C, anSALD deposition process can be accomplished by oscillating the positionof the substrate 97 across the deposition head 30 (in the in-trackdirection indicated by the motion arrow 98) for the number of cyclesnecessary to obtain a uniform deposited film of the desired thicknessfor the given application.

FIG. 3A is a cross-sectional view of a deposition head 30 illustrating apreferred embodiment of the present invention where the deposition zone305 is arranged to be symmetric, so that as the substrate 97 is movedrelative to the deposition head 30 a position can “see” a full cycleexposure in either a forward or reverse direction. FIG. 3B illustrates aplan view corresponding to the cross-sectional view of FIG. 3A, wherethe cross-sectional view is taken along the line A-A′ of the plan view.In common parlance, the deposition head 30 illustrated in FIG. 3A-3B canbe referred to a “one-and-a-half cycle head” or a “1.5 cycle head.”Moving from left-to-right through the deposition zone 305, the substrate97 is exposed to (in order) a first reactive gas zone 313 where thesubstrate is exposed to a first reactive gas G1, an inert purge zone 314where the substrate is exposed to an inert purge gas P, a secondreactive gas zone 315 where the substrate is exposed to a secondreactive G2, another inert purge zone 314 where the substrate is exposedto the purge gas P, and another first reactive gas zone 313 where thesubstrate is exposed to the first reactive gas G1. Moving in the reversedirection from right-to-left through the deposition zone 305, thesubstrate 97 is exposed to the same sequence of gases as in the forward(left-to-right) direction, namely the first reactive gas G1, the inertpurge gas P, the second reactive gas G2, the inert purge gas P, and thefirst reactive gas G1. The advantage of this symmetry is that feedingthe substrate 97 from left-to-right or right-to-left results inequivalent exposure, and entrance and exit sides of the deposition head30 depend of the direction of relative motion of the substrate 97 notthe design of the deposition head 30.

As with the previous embodiments, the gas zones (or regions) are betweenthe substrate 97 and the deposition head 30. The labels in FIG. 3A areplaced above the substrate for clarity and to further emphasize thesmall working distance 94 between the process-side of substrate 97 andthe output face 134 of the deposition head 30 enabled by the use of avacuum-preloaded gas bearing deposition head 30. As illustrated in theplan-view of FIG. 3B, in addition to the output slots 112 (shown asblack lines) and the exhaust slots 114 (shown as gray lines) in thedeposition zone 305 (shown as a shaded area), there are additionaloutput slots 401 orthogonal to the gas slots 110 in the deposition zone305. The additional gas output slots 401 provide inert gas to thecross-track edge region of the deposition head 30, providing furtherisolation of the deposition zone 305 from the external environment 15.

The exemplary gas bearing deposition head 30 of FIG. 3A has gas slots110 corresponding to 1.5 ALD cycles to provide the proper sequence ofgas exposure in the forward and reverse directions. As the substrate 97is oscillated back and forth over the deposition head 30, it willprovide only a single ALD cycle (one G1 and one G2 exposure) per singledirection pass over the deposition head 30, therefore a round triposcillation provides two ALD cycles. Furthermore, when the secondprecursor G2 is reactive with the external environment, while the firstprecursor G1 is not, this arrangement provides additional protectionagainst unwanted reactions involving G2. An example of a precursor pairthat would benefit from this arrangement is water and trimethylaluminum(TMA), where water is the non-reactive precursor G1 and TMA is thehighly reactive precursor G2.

The deposition head 30 is preferably constructed of a material whichdoes not react with the precursor gases and can withstand the requiredtemperatures without significant deformation. One preferable material isstainless steel. It is recognized that other materials can also be used,but differential thermal expansions must be kept low to preventdistortions. As described, the deposition head 30 delivers multiplereactive and inert process gasses through output face 134. Connection ofthe various gas sources to the deposition head 30 can be accomplishedusing individual pipe or tubing connections distributed about theperiphery of the deposition head 30. In an exemplary configuration,commercially available fittings, such as Swagelok VCR series components,are used for gas source connections. In preferred embodiments, the gasesare supplied to the deposition head 30 via a manifold.

A relatively clean external environment is useful to minimize thelikelihood of contamination, but is not necessary. Full “clean room”conditions or an inert gas-filled enclosure can be used in systems ofthe present invention, however preferred embodiments do not be requirecontrol of the external environment and are advantaged for that reason.The apparatus of the present invention is advantaged in its capabilityto perform deposition onto a substrate 97 over a broad range oftemperatures, including room temperature, or near-room temperature, insome embodiments. The apparatus of the present invention can operate ina vacuum environment, but is particularly well suited for operation ator near atmospheric pressure. In preferred embodiments, the SALD processcan be performed at or near atmospheric pressure and over a broad rangeof ambient and substrate temperatures, preferably at a temperature ofunder 300° C.

As previously discussed, exemplary configurations for SALD systems 200use a vacuum-preloaded gas bearing deposition head 30. Exemplary designsfor the vacuum-preloaded gas bearing deposition 30 head includealternating gas output slots 112 and exhaust slots 114 (i.e., vacuumslots). When used to process small rigid substrates 97, it is possibleto operate the SALD system 200 without the use of a substrate backer, oralternatively to use a rigidly attached backer. For larger substrates97, there is a need for the system to include a non-contact heat source.For larger flexible substrates 97 there is a particular need to managethe distortion of the substrate 97 that may be caused by the pressurefields in the deposition zone.

As previously described, an SALD deposition head 30 operating as avacuum-preloaded gas bearing, provides the advantages of high efficiencyof materials utilization, freedom from gas intermixing, and fastreaction kinetics when operating with a separation between the substrate97 and the output face 134 of the deposition head 30 that is very small.In some configuration, such as is described in commonly-assigned,co-pending U.S. patent application Ser. No. 15/458,235 to Spath et al.,entitled “Modular thin film deposition system,” which is incorporatedherein by reference, a substrate backer device can be used in thesesystems to act as a heat source for the substrate 97 in order to achieveprocess temperature aims. In some configurations, the backer deviceserves as a barrier to convective and radiative heat loss without activeheating. In some applications, the substrate unit includes a backerdevice that is temporarily attached to the substrate 97, and that moveswith the substrate 97 during deposition. However, when coating largeaspect ratio substrates 97, particularly substrates 97 that areconsiderably longer than the deposition head 30, it is desirable to havea backer which does not move during deposition, and is stationary withrespect to the relative motion of the substrate 97 and the depositionhead 30. When coating continuous web substrates 97, as in a roll-to-rollprocess, the utility of the stationary gas-bearing backers of thepresent invention are particularly advantaged.

It is known in the art to use a gas-bearing backer in SALD systems tohelp maintain substrate position. However, prior art disclosures arelimited to gas-bearing backers having a rigid, or fixed, position. Theuse of prior art gas-bearing backers can be considered to fall with twocategories, those used with separate mechanically fixed positioningdevices, or systems where a substrate is fed between two fixed, parallelgas bearings where one or both of the gas bearings are configured forSALD deposition. For example, commonly-assigned U.S. Patent ApplicationPublication 2011/0097491 (Levy et al.), entitled “Conveyance systemincluding opposed fluid distribution manifolds,” discloses a gas-bearingbacker in conjunction with guide rollers. The gas pressure provided bythe backer is used to force the substrate into contact with the guiderollers. The roller-to-deposition head distance (h) thereby controls thegap between the deposition head and the deposition side of thesubstrate.

In another example, an article entitled “Conduction Heating in RTP Fast,and Pattern-Independent” (Materials Science Forum, ISSN: 1662-9752,Vols. 573-574, pp 375-386, 2008) by E. Granneman discloses a rapidthermal processing device that uses a dual-sided gas bearingconfiguration in which arrays of discrete orifices in opposing firmlymounted (i.e., fixed-position) gas delivery devices provide the highforces necessary to suspend (relatively) rigid wafers within the fixedgap between two fixed gas bearings. The thickness of the substrate islimited to what will fit in the fixed gap. Granneman notes that heattransfer by thermal conduction across a gas layer is dominant when thelayer is on the order of 150 μm or less. For the intended purposes ofthe Granneman system, namely the transport of standardized thicknesswafers for thermal processing, the 150 μm nominal clearance (per side ofthe substrate) is more than adequate to accommodate normal thicknessvariation of the wafers without causing risk of collision or asignificant change in heat transfer coefficient.

The backside-bearing backer of the present invention serves as a safetydevice, preventing a flexible substrate from detaching from a vacuumpreloaded deposition head 30 in the event of a disturbance, such as canbe caused by interruption in the exhaust gas flow. For roll-to-roll SALDcoating systems, it is desirable to design the web path to minimize thelikelihood of damaging the web. For example, to avoid scuffing the webon the corners of the deposition head 30, the web tension can include anout-of-plane component directed away from the output face of thedeposition head 30. While useful, this tension can cause the web to liftaway from the output face after a disturbance to a point that exhaustvacuum is unable to reestablish a preload condition. The use of abackside-bearing backer in accordance with the present inventionprovides a force on the web of substrate toward the deposition head 30that counteracts the out-of-plane tension component, allowing theprocess side of the web of substrate to be maintained within closeproximity to the output face of the deposition head 30.

The use of deposition heads 30 with flexible substrates 97 can cause anumber of problems that can be addressed using backside-bearing backersin accordance with the present invention. In some prior-art designs,such as that illustrated in FIG. 4, the deposition head 30 supplies onlypositive pressure gas within the gas delivery zone 80, and the exhaustis either at the edge of the deposition head 30 or at the edge of thesubstrate 97. Deposition heads 30 of this type include the previouslydiscussed transverse design. As illustrated by the cross-sectional viewshown in FIG. 4, flexible substrates 97 positioned above a depositionhead 30 with a net positive pressure profile can be easily deformed bythe gas pressure from the deposition head 30. This unwanted substratedistortion leads to an uneven process-side gap between the depositionhead 30 and the substrate 97, increasing the potential for unwantedprecursor intermixing. More preferably, deposition heads 30 for use withthe present invention have a preloaded-vacuum gas bearing design whichuses a multitude of parallel elongated slots, which form alternatingpositive pressure zone (corresponding to output slots) and negativepressure zones (corresponding to exhaust slots) with respect to thelocal external environment. This arrangement results in laminar gasflow, parallel to the plane of the output face of the deposition head30, in the direction of substrate travel within the gap between thedeposition head 30 and the substrate 97. The local pressure profiles areapproximately mirror symmetric about the exhaust slots, creating a “sawtooth” pressure profile across the expanse of the active gas deliveryzone 80 of the deposition head 30. As illustrated in FIG. 5, when thesubstrate 97 is unsupported on its back side, the saw tooth pressureprofile causes deformation of the flexible substrate 97, resulting inthe formation of standing wave “corrugations.” In some configurations,the slots the deposition head 30 extend across the majority of the widthof the substrate 97. In this arrangement, the corrugations inunsupported flexible substrates 97 tend to continue to the nearby edgesof the substrate 97 where they can vent the high pressure source gas tothe external environment (ambient atmosphere), thus collapsing thelevitation of the substrate 97 from the deposition head 30. In extremecases, for example with substrates 97 having a low flexural stiffness,the substrate 97 can make contact with the deposition head 30 at or nearthe low-pressure exhaust slots (also known as “sink” slots) in thedeposition head 30. Any contact is likely to cause destruction of theintegrity of a thin film coating by way of scratching or abrasion.

In SALD systems 200 coating flexible webs of substrate 97, there is aneed to maintain flatness during deposition. In typical web coatingoperations, the web tension can be used to assist in managing thesubstrate flatness. However, the effectiveness of web tension as asolution is limited at elevated deposition temperatures with polymericsubstrates. In-track web tension can be employed in SALD systems toreduce corrugation amplitude to a degree. However, the amount of tensionthat can be acceptably applied is limited by the tensile creep behaviorof the substrate and the process time and temperature that the substratewill be subjected to. For flexible polymeric substrates 97 worked athigh temperature, the acceptable tension is severely limited. Allowanceof excessive creep can result in cracked brittle coatings (e.g., formetal oxides), misalignment of pre-patterned features in subsequentoperations due to web elongation, reduction in thickness or width of theoutgoing web due to Poisson's effect, compromised tensile strength andplanarity, or other defects.

The use of a gas-bearing backer can serve to maintain the flatness of,or to actively flatten, a flexible web. Prior art designs, such as thoseillustrated in FIGS. 6 and 7 have used a fixed, non-contact, gas-bearingbacker 40 in a parallel plane opposite the deposition head 30. Thedeposition head 30 in FIG. 6 is a positive pressure design similar tothat shown in FIG. 4, and the deposition head 30 in FIG. 7 is apreloaded-vacuum gas bearing design similar to that shown in FIG. 5. Inthese examples, the gas-bearing backer 40 is fixed in place and is amirror image of the corresponding deposition head 30. A substratepositioner 280 moves the substrate 97 laterally over the deposition head30. Such designs have been found to be unduly expensive and difficult tooperate. In order for the systems of FIGS. 6 and 7 to exactly balancethe pressure profile from the active deposition head 30, the geometry ofthe slot positions and the gas flow rates emanating from the individualslots need to be closely matched in the fixed gas-bearing backer 40. Thegas flows for the deposition heads 30 are commonly controlled bymultiple mass flow controllers (MFC's), which are settable according toa specified “recipe.” The gas flows for the fixed gas-bearing backers 40would need similar individual port level controls to be balanced underall process variations, which would incur a significant expense.Additionally, the fixed gas-bearing backer 40 requires precise alignmentto the deposition head 30. In conditions where the gas bearing stiffnessof the deposition head 30 and fixed gas-bearing backer 40 are similar,the resultant suspension is prone to oscillatory out-of-plane motion(aka: flutter). Also, the positions of the fixed gas-bearing backer 40and deposition head 30 positions must provide sufficient clearance toaccommodate the full range of substrate thickness variability, thereforethe range of substrate thickness that can be used with good gap controlis limited in these prior art systems.

The process-gap between the deposition head 30 and the substrate 97 ispreferably on the order of 30 μm or less for SALD, with process-gaps onthe order of 5-15 μm being even more desirable. The backside-gap betweensubstrate 97 and gas-bearing backer 40 must be of similar order toconstrain the corrugation amplitude of flexible substrates 97, and istypically less than 20 μm. In preferred operating conditions, the sum ofthe gaps (i.e., the distance between the output face of the depositionhead 30 and the output face of the gas-bearing backer 40, minus thethickness of the substrate 97) is on the order of, or even smaller than,the thickness tolerance of many commercial substrates of interest. Forexample, the thickness tolerance of commodity PET is about 0.7 mils(i.e., about 18 μm). In some processes, the thermal expansion of theweb, or of the machine apparatus, can also be limiting. Therefore, anyarrangement wherein the gas-bearing backer 40 is in a fixed positionwill be prone to jamming when operated at the desired close proximityfor SALD. The present invention provides a gas-bearing backer 40 that“floats” on the web of substrate 97 with a constant net force (i.e.,“zero stiffness”), thereby enabling the desired small backside-gap andprocess-gap to be maintained on each side of the substrate 97 in thepresence of web variation and without causing a change in pressureprofile on the deposition side of the web.

In preferred embodiments, an SALD system 200 of the present invention isa two bearing system including a vacuum-preloaded gas bearing depositionhead 30 and a low-stiffness gas-bearing backer 40, which togethermaintain the distance of the substrate 97 from the output face 134deposition head 30 (i.e., process gap d_(p)) during the thin-filmdeposition process. FIG. 8 illustrates an exemplary SALD system 200 inwhich a deposition head 30, a flexible substrate 97 to be coated, and agas-bearing backer 40 are arranged in a vertical stack. The depositionhead 30, which is a type of high-stiffness gas bearing, is positionedwith its output face 134 oriented in a horizontal plane and facing afirst surface 50 (i.e., the “process side”) of the substrate 97. Thelow-stiffness gas-bearing backer 40 is positioned with its output face41 facing an opposite second surface 51 (i.e., the “non-process side”)of the substrate 97. The gas-bearing backer 40 can freely move in adirection normal to its output face 41 and floats over the substrate 97.The gas-bearing backer 40 is optionally heated.

The gas-bearing backer 40 differs from conventional gas-bearings whichare positioned between two machine elements to “bear” the load of oneelement and transfer it to the other. The gas-bearing backer 40 in theconfiguration of FIG. 8 does not primarily serve to “bear” the load of asecond machine element, nor to provide guidance for a second machineelement. Rather, it functions is to “back up” the substrate 97 byproviding a substantially constant non-contact force onto the substrate97, and secondarily to provide heat to the substrate 97. Therefore,gas-bearing backer 40 can alternately be referred to as a “gas-levitatedsubstrate backing system” or a “gas-separated substrate backing system.”

The term “stiffness” is used to have its commonly understood mechanicalmeaning of force per unit displacement. When applied to gas bearings,stiffness refers to force and displacement in the normal direction fromthe bearing face. As applied to the dual-bearing system of the presentinvention, the displacement is the change in position in the substratein the direction normal to the output face of the gas bearing. In thepresent invention, a “low-stiffness” gas bearing has the ability tofreely move in the normal direction, and the force imparted on thesubstrate is substantially independent of the position of the substraterelative to its output face. In contrast, the force imparted by a“high-stiffness”gas bearing is responsive to the position of thesubstrate relative to its output face. The low-stiffness gas bearings ofthe present invention have a stiffness close to zero. The high-stiffnessgas bearings of the present invention have at least an order ofmagnitude (10×) greater stiffness than the low-stiffness bearing,preferably at least 100×, or more preferably at least 1000×.High-stiffness gas bearings in preferred embodiments arevacuum-preloaded gas bearings, more preferably are vacuum-preloaded gasbearing deposition heads.

In the arrangement of FIG. 8, the position of the substrate 97 ismoveable in a direction normal to the output face 134 of deposition head30. The gas supplied from the output face 134 of the deposition head 30forms a gas film between the deposition head 30 and the substrate 97,and imparts a first net force onto the first surface 50 of the substrate97. The substrate 97 is supported, or levitated, by the gas film betweenthe substrate 97 and the output face 134 of the deposition head 30. Theposition of the gas-bearing backer 40 is unconstrained and moveable in adirection normal to the output face 134 of the deposition head 30. Thesecond surface 51 of the substrate 97 is separated from the gas-bearingbacker 40 by a backside gas film that is supplied from the output face41 of the gas-bearing backer 40. The backside-bearing is levitated bythe gas film emanating from its output face 41 and imparts a second netforce onto the second surface 51 of the substrate 97. The position ofthe gas-bearing backer 40 is responsive to a gas flow through its outputface 41 to provide a backside-gap d_(b) between the gas-bearing backer40 and the second surface 51 of the substrate 97 that is preferably nomore than 50 μm. Typically, the only load supported by gas flow from thegas-bearing backer 40 is the weight of the gas-bearing backer 40 itself.

The vacuum-preloaded gas bearing deposition head 30 of the preferredconfiguration is capable of providing both attractive as well asrepulsive forces, and has a high-stiffness characteristic. Consequently,there is a rapid change in the normal force as a function of the gasfilm thickness (i.e., the thickness of the process gap d_(p)). This canbe enabled by head designs which include a high friction factor in thepositive pressure sources provided by the output channels of thedeposition head 30 and a low friction factor vacuum preload provided bythe exhaust channels.

The gas fluid bearing existing between the substrate and the gas-bearingbacker 40 functions to transfer the weight of the gas-bearing backer 40to the substrate 97 as an additional preloading force on thevacuum-preloaded gas bearing deposition head 30. The gas-bearing backer40 can have any stiffness so long as it performs this function. In theillustrated configuration, the gas-bearing backer 40 is free to seek anequilibrium position in the z-direction (given the gas flow and mass ofthe gas-bearing backer 40), therefore the net force from the gas-bearingbacker 40 is only a function of its weight and will be constant. In apreferred configuration, the non-contact force applied to the surface ofthe substrate 97 by the gas-bearing backer 40 is no more than about 1.0pound per square inch of the output face 41, and more typically is nomore than about 0.2 pounds per square inch. The effect of thegas-bearing backer 40 suspension is to provide a zero stiffness load onthe substrate 97 regardless of the actual backside gas film stiffness.The combination of high stiffness on the deposition side of thesubstrate 97 and zero stiffness on the backside provides an inherentlatitude for changes in the thickness of the substrate 97 and providesan independence from influences that exist in systems with rigidstructural mounting. The gas-bearing backer 40 operates in extremelyclose proximity to the backside (i.e., the second surface 51) of thesubstrate 97. The gas-bearing backer 40 is advantageously designed withan overall normal stiffness that is 1 to 2 orders of magnitude less thana typical commercial machine guide gas bearing and is also designed tohave a flatter pressure profile than would be achieved through typicalgas bearing construction and operating conditions. Despite its lowstiffness, the gas-bearing backer 40 provides a flattening functionalityto improve planarity of the flexible substrate 97.

FIG. 9 illustrates the use of the SALD system 200 of FIG. 10 with arigid substrate 97. When coating large rigid substrates 97, thegas-bearing backer 40 of the present invention is advantaged due itsability to supply a non-contact weight component, which enables themovement of the substrate 97 relative to the deposition head 30 to occurindependent of the gas-bearing backer 40. In some embodiments, thegas-bearing backer 40 is also used to supply heat to the substrate 97 inorder to maintain temperature during deposition.

For thin substrates 97, the weight of the substrate 97 in the vicinityof the deposition head 30 may be negligible compared to the weight ofthe gas-bearing backer 40. It is understood that the stack can bereoriented from vertical to other angles, such as horizontal, and theequivalent constant “gravitational” force can be imparted on thegas-bearing backer 40 by other means, such as a fixed weight transferredvia a bell crank or levers. Other non-gravitational forces could also beemployed using any type of force mechanism known in the art. The forceapplied by the force mechanism is preferably constant, or substantiallyconstant. Furthermore, the force is substantially constant regardless ofthe substrate thickness and position. Within the context of the presentdisclosure, the term “substantially constant” means that there is nointentional variation of the quantity (e.g., the applied force) due tochanges in the relevant system factors. Within the context of thepresent disclosure, the term “substantially constant” means that thereis less than 25% variation during operation, preferably less than 15%variation, and more preferably less than 5% variation. One exemplaryconfiguration is illustrated in FIG. 10. In this example, the substrate97, the output face 134 of the deposition head 30 and the output face 41of the gas-bearing backer 40 are all oriented vertically. A fixed mass60 is hung from an L-shaped lever 61, which is pivotable about a pivotpoint 62. The lever 61 applies a constant horizontal force F onto thegas-bearing backer 40 (which will be equal to the weight of the mass 60when the arms of the lever 61 have an equal length).

The design considerations are different for the low stiffnessfree-motion gas-bearing backer 40 of the present invention than fortypical industrial gas bearings or for the fixed dual-sided gas bearingspreviously employed for wafer processing. The gas-bearing backer 40 ofthe present invention does support a load, making it similar in somesense to industrial gas bearing; however, as mentioned previously, theonly load supported by gas flow through the output face 41 of thegas-bearing backer 40 is the weight of the gas-bearing backer 40 itself,so that the load (and correspondingly, the required gas pressure) isvery low compared to other systems.

For comparison, industrial gas bearings are commonly used in waysystems, such as guidance systems of precision machinery, where theadvantages of negligible friction, negligible wear, heavy load bearingcapability, and high stiffness are critical to accurate positioningperformance. In typical industrial systems, standardized bearings areplaced around precision finished spars, for example lapped granite beamsor accurately ground metallic bars having precise straightness andparallelism. Each bearing is typically mounted with a hemispherical ballsocket such that the bearing face conforms to the plane of the guidingspar and thus acts to provide a point support. As a point load support,the actual pressure profile under common industrial bearings is notimportant, only the integrated pressure over the bearing area. Inpractice, two separated bearings are used to define a line, and threeseparated bearings are used to define a plane, according to basicgeometric principles, and are used to support not just the spar, buttypically a substantial load. Furthermore, the multiple bearings arerequired to provide the necessary roll and pitch stiffness in industrialsystems, since no individual bearing is configured to provide thesefunctions for these applications. While industrial gas bearings havevarious constructions and designs, none are well suited for thebackside-bearing of the present invention. Industrial gas bearings thatutilize an impermeable plane, such as a lap finished metallic plate witha central gas source or bearings comprised of a central relieved cavityand a perimeter land that creates a restricted gas passage when placednear a guiding surface, are known to collapse if a moment load isintroduced that allows the individual bearing to become tilted withrespect to the adjacent surface. Under these conditions, the pressurizedgas within the industrial bearing is able to vent to the surroundingsthrough an open side of the gap (caused by the tilt of the impermeableplane of the bearing), causing a loss of levitation and allowing thenear side of the bearing to make contact with the adjacent surface. Suchan impermeable industrial bearing is not capable of stably levitating aflexible sheet of material.

An industrial alternative to the impermeable designs are porous gasbearings. Porous gas bearings can provide an advantage that gas flow isdistributed through the whole bearing surface rather than through singleor few discrete orifices. Porous bearings are not subject to completecollapse if tilted and can remain functional with minor defects such asscratches. Porous bearings can support moment loads within limits.However, commercial machine element porous gas bearings typically haveload capability in tens of pounds per square inch at source pressures of60 psig and higher. High stiffness on the order of 3×10⁵ pounds/inch fora bearing area of 3200 mm² is desirable in machine applications and isachieved by means of preloading the bearing using opposing bearingsacting on parallel surfaces (loaded against each other). Alternatively,a vacuum preload can be used to achieve the same effect, for exampleusing a vacuum preloaded bearing between two positive pressure bearingson the same surface. For industrial bearing systems, the vacuumpreloaded bearings typically use a vacuum level of about ⅔ of anatmosphere due to both the ease of obtaining this vacuum level (i.e.,with simple vacuum pumps, such as rotary vane types) and in order tominimize bearing area, as higher vacuum levels require less preload arearesulting in more compact bearing assemblies.

The gas-bearing backer 40 of the present invention is unique, in partbecause it is used singly and not in conjunction with other bearings todefine a line or plane. It has no mounting interface to interact withother machine elements or external loads. It provides sufficient pitchand roll stiffness to maintain itself in a stable position. In anexemplary configuration, the gas-bearing backer 40 has a rigid housingwith a porous media membrane. Any suitable porous material with thedesired gas permeability can be used. Membranes with apermeability-to-thickness ratio (k/t) of greater than 1×10⁻⁹ inches arepreferred. One exemplary porous material that can be used for thepresent invention is porous graphite, which is desirable due to itscommercial availability. Graphite is used for electric dischargemachining (EDM) processes, and is available as a commodity, and has arange of grain sizes which leads to a useful range of gas permeability.As will be discussed later, in preferred embodiments of the presentinvention, the porous material layer includes a rib structure internalto the backside-bearing construction.

An exemplary gas-bearing backer 40 configuration is illustrated in FIG.11. The gas-bearing backer 40 has an output face 41 which faces thesecond surface 51 of the substrate 97, and includes a porous materiallayer 42 mounted in a rigid backer housing 43. The porous material layer42 includes a thin porous membrane 49. Gas enters the gas-bearing backer40 from an external gas source (not shown) and flows through a gasmanifold 44 within the backer housing 43 and out of the output face 41through the porous material layer 42. Gas can be supplied to the gasmanifold 44 by any type of gas source available in the art. For SALDapplications, the gas is preferably an inert gas such as nitrogen. Inother arrangements, the gas can be air or some other gaseous substance.A lateral constraint system 53, constrains the gas-bearing backer 40from moving laterally in a plane parallel to the output face 134 of thedeposition head 40 while enabling the gas-bearing backer 40 to movefreely in a direction normal to the output face 134 of the depositionhead 30. In an exemplary configuration, the gas-bearing backer 40 fitswithin an opening in the lateral constrain system 53 that is slightlylarger than the perimeter of the gas-bearing backer 40. In otherconfigurations, different types of lateral constraint systems 53 can beused to constrain the lateral position of the gas-bearing backer 40. Forexample, FIGS. 22A-22B illustrate a configuration where flexures 284provide the lateral constraint feature. Other configurations of lateralconstraint systems 53 are within the scope of the present invention aslong as they constrain motion in the x-direction, y-direction, androtation about the z-axis, and retain freedom of motion in thez-direction, and rotation around the x-axis and y-axis.

In some embodiments, the gas-bearing backer 40 includes a heater 45 toprovide non-contact heating to the substrate 97, which can be useful inSALD systems, as well as other in other applications. Heat supplied bythe heater 45 heats the backer housing 43 and the porous material layer42. Heat from the output face 41 of the gas-bearing backer 40 then heatsthe substrate 97 by conductive heating.

Typical porous gas bearing operating temperatures are considered to bewithin +/−30° F. of ambient. It is normally an advantage that the lowfriction of gas bearings, caused only by the viscous shear of theworking gas, results in negligible heat generation. The upper operatingtemperature of the heated gas-bearing backer 40 of the present inventionis much greater, on the order of 300° C., to provide desirable heattransfer levels during SALD deposition. Efficient use of pressurized gasresults in low mass flows and the heat energy wasted by convection ofgas escaping from the bearing perimeter is small.

As previously discussed, thermal conduction of energy across the gasfilm is the primary mechanism for substrate heating; this is primarilydependent on gas film thickness and not on gas flow rate. Anyappropriate type of heater 45 known in the art can be used in accordancewith the present invention. Preferably, the heater 45 does notcontribute any significant disturbance to the constant force on thesubstrate 97 provided by the gas-bearing backer 40. In an exemplaryconfiguration, the heater 45 is a resistive heater cartridge which ismounted internally or external to the backer housing 43. Resistivecartridge heaters are well known and require a source of electriccurrent, which in some embodiments can be provided by flexible wireswhich are carefully routed and suspended to minimize forces and momentsimparted on the gas-bearing backer 40. In other configurations, awireless power transfer mechanism, such as magnetic induction coils onthe heater 45 and nearby fixed structure, can convey electricity to thegas-bearing backer 40 acting as a gas coupled transformer. Inalternative embodiments, metallic portions of the gas-bearing backer 40are directly heated by high frequency induction heating (i.e., eddycurrent heating). Other examples of heater mechanisms that can be usedin accordance with the present invention include infrared (IR)absorption and pumping of heated working fluids. In some configurations,porous graphite of the porous material layer 42 can be used as aresistive heater.

The gas flow through the porous material layer 42 can be controlled bycontrolling the gas pressure or the gas flow provided by the gas source.The gas-bearing backers 40 of the present invention typically operate atlow source pressures with a low overall volumetric gas flow whencompared to other gas-bearing designs. In one exemplary configuration,the gas pressure supplied to the gas-bearing backer 40 is 0.043 psi.Most commercially available pressure regulators do not operate well asthis low pressure level. In an exemplary embodiment, a “T” arrangementof adjustable flow restrictors (e.g., needle valves) can be useddownstream of a pressure regulator to vent part of the gas flow toatmosphere and thus reduce the pressure supplied to the gas-bearingbacker 40.

In alternative embodiments, the gas-bearing backer 40 can have aninternal means for generating the necessary gas pressure for bearingoperation. For example, an embedded fan in gas-bearing backer 40 can beused similar to the operation of a hovercraft. Embodiments having anembedded fan have the advantage of the fan being able to operate atvariable speed, therefore can be used to supply a variable pressure tothe gas-bearing backer 40, allowing for dynamic control.

To better understand the features of the gas-bearing backers 40 of thepresent invention, a number of examples will be discussed.

Comparative Example

In a comparative SALD system configuration, a rigidly attached heatedvacuum backer device 70 is used as is illustrated in FIG. 12. The heatedvacuum backer device 70 is temporarily attached to and moves with thesubstrate 97 to form a combined substrate unit 74, which in this exampleis a 2.5″ square flexible or rigid substrate. A resistive cartridgeheater 73 is mounted to the vacuum backer device 70 to provide heatduring SALD deposition. The mass of the vacuum backer device 70,including the heater 73, is 91 g. The mass of a 2.5 inch square×0.003inch thick polyimide substrate, attached to the vacuum backer isnegligible in this example. The weight per unit area of the substrateunit 74 (combined vacuum backer device 70 and substrate 97) isapproximately 0.04 psi. The combination of the vacuum backer device 70and the substrate 97, provide a load that is supported by thehigh-stiffness gas bearing of the deposition head 30. Useful gas-bearingbackers 40 of the present invention provide a similar load to thesubstrate 97, such that the SALD system operates at the desiredprocess-gap.

Inventive Examples

The gas-bearing backers 40 of the following Inventive Examples areintended to supply a similar load (and therefore a similar averagepressure) on the substrate 97 as the previously described ComparativeExample so that a consistent gap between the substrate 97 over thedeposition head 30 is maintained. In each of the Inventive Examples, thewidth of the gas-bearing backer 40 was designed to be 2 inches to matchthe size of an exemplary deposition head 30.

Electro Carb EC-12, a commercially available porous graphite material,was chosen for the porous material layer 42. The gas permeability ofElectro Carb EC-12 was measured to be 2.15×10⁻¹¹ inch². The permeabilitytest was as follows: a plate of Electro Carb EC-12 graphite was machinedto a thickness of 0.1082 inch and tested in a Gurley Porosimeter with anaperture area of 1.0 inch²; the average time to pass 25 cc of gas at1.22 kPa differential pressure was 126 secs.

The gas-bearing backer 40 of Inventive Example #1 was constructed usingthe Electro Carb EC-12 material for the porous material layer 42 in arigid aluminum backer housing 43. The mass of the gas-bearing backer 40is predominately the mass of the aluminum backer housing 43 that holdsthe porous material layer 42. The exemplary gas-bearing backer 40 ofInventive Example #1 has a mass of approximately 90 g, nominallymatching the mass of the vacuum backer device 70 of the ComparativeExample. The porous material layer 42 of Inventive Example #1 is porousmembrane made of Electro Carb EC-12 with a thickness of 0.125 inchwithin the aluminum backer housing 43, and is used as the output face 41of the gas bearing backer 40. The construction of Inventive Example #1uses a membrane thickness that is consistent with commercial bearingswhere the porous media must withstand source pressures of 10 s of psi,but is within the form factor required for the system usage. Thecorresponding permeability/thickness ratio (k/t) for Inventive Example#1 is 1.72×10⁻¹⁰ inch.

A one-dimensional simulation of the gas pressure distribution betweenthe gas-bearing backer 40 and the second surface 51 of the substrate 97was performed, where the inputs to the simulation are source pressure,membrane thickness, and load, and the output of the simulation arebackside-gap d_(b) (i.e., fly height) and pressure distribution. At asource pressure of 30 psi, the gas-bearing backer 40 of InventiveExample #1 has a relatively large backside-gap of 0.0046 inch (116 μm).FIG. 13 is a graph showing the pressure distribution at theseconditions. As shown, the pressure distribution has a large peak of0.060 psi when the gas-bearing backer 40 is operated at a sourcepressure of only 30 psi. While the gas-bearing backer 40 of InventiveExample #1 can perform the function of loading the substrate to adeposition head 30, the peaked pressure distribution is undesirable inflexible substrate applications, because the flexible substrate is notloaded uniformly against the output face 134 of the deposition head 30,and therefore may flutter and detach at the periphery.

Inventive Examples #2 through #5 were constructed in a similar manner toInventive Example #1 with the following exceptions. The permeability ofthe porous membrane was adjusted to be 4.0×10⁻¹² inch² (which is moretypical for finer grain graphite materials), and the membrane thicknesswas varied as follows: Inventive Example #2 has a membrane thickness of0.031 inch, Inventive Example #3 has a membrane thickness of 0.062 inch,Inventive Example #4 has a membrane thickness of 0.125 inch, andInventive Example #5 has a membrane thickness of 0.188 inch. Thecorresponding permeability/thickness ratios for Inventive Examples #2through #5 are: k/t=1.29×10⁻¹⁰ inch, k/t=6.45×10⁻¹¹ inch, k/t=3.20×10⁻¹¹inch, and k/t=2.13×10⁻¹¹ inch, respectively. The necessary sourcepressure and corresponding pressure distribution were calculated foreach example using a backside-gap of d_(b)=0.0004 inch. FIG. 14 showsthe calculated pressure distribution for these four examples. The sourcepressure necessary to maintain the constant backside-gap increases withincreasing membrane thickness. If alternatively, the source pressure wasto be fixed, thicker membranes will result in a lower backside-gap.Regardless of the source pressure, increasing the membrane thicknessexacerbates the pressure distribution peak, and therefore thinnermembranes are required for use in flexible substrate applications.

Inventive Examples #6 through #9 were constructed in a similar manner toInventive Example #5 with the following exceptions. The membranethickness was varied as required to maintain a backside-gap ofd_(b)=0.0004 inch (10 μm) at the following source pressures: the sourcepressure of Inventive Example #6 was 0.08 psi, the source pressure ofInventive Example #7 was 0.07 psi, the source pressure of InventiveExample #8 was 0.06 psi, and the source pressure of Inventive Example #9was 0.05 psi. As the source pressure was decreased, the requiredmembrane thickness decreased resulting in an increasingpermeability-to-thickness ratio. FIG. 15 shows the calculated pressuredistribution under these conditions. It can be seen that the pressureuniformity is improved as the source pressure is reduced (with acorrespondingly thinner membrane and higher k/t). The pressure profilesillustrated in FIGS. 14 and 15 demonstrate that the shape of thepressure profile for a fixed backside-gap and load is a function of theratio of permeability/thickness (k/t), wherein a higher k/t results in aflatter profile.

Inventive Examples #10 and #11 were constructed in a similar manner toInventive Example #5 with the following exceptions. As with previousexamples, the gas-bearing backers 40 of Inventive Examples #10 and #11were designed to be operated with a backside-gap of d_(b)=0.0004 inch.Inventive Example #10 used a porous membrane thickness of t=0.125 inchsupplied with a source pressure of 0.042 psi. FIG. 16 shows a computedpressure profile for a load of 0.200 lb. It can be seen that thepressure profile is uniform to within 5% over more than 80% of the widthof the bearing area. In other embodiments, pressure profiles can beuniform to within 15% over at least 80% of the width of the bearingarea. To achieve the flat pressure profile, the required permeability ofthe membrane under these conditions is 4.0×10⁻¹⁰ inch², for apermeability/thickness ratio of k/t=3.2×10⁻⁹ inch. A survey of availablegraphite materials shows that this range of permeability is not readilyavailable as a stock item as the major market for graphite blocks favorsfiner grain structures.

A number of available materials were investigated for suitability foruse as the as the porous material for the inventive backside-bearing.The porous material must have a low enough permeability to provide therequired pressure drop for the bearing to be stable. The porous materialmust also have sufficient mechanical integrity in a thin membrane forboth handling considerations and in order to withstand the pressurefields in operation. For use in SALD systems, it is also desired thatthe backer-face of the backside-bearing has a high degree of flatness.Sintered metal particles and woven or perforated screens have apermeability that is too large, or in instances where the permeabilityis suitable have insufficient flatness for the bearing face. Sinteredplastic filter materials are available with permeability values in thedesired range, and can be used for backside-bearings whose operatingtemperature is limited to be compatible with the plastic material.Columnar porosity in anodized alumina structures can also be used in thepresent invention, however cost and potential issues with the brittlestructures make it a less preferred material, particularly for SALDequipment of any reasonable scale. Preferred porous membranes of thepresent invention are porous on a microscopic scale, much smaller thanthe thickness of the porous material layer. A range of porous graphitematerials are preferred for use in backside-bearings of the presentinvention due to their availability, permeability and structuralproperties.

Inventive Example #11 used the commercially-available Electro Carb EC-12graphite for the porous membrane, as discussed above, with apermeability of 2.15×10⁻¹¹ inch². The membrane thickness was t=0.015inch, providing a permeability/thickness ratio of k/t=1.43×10⁻⁹ inch.FIG. 16 shows the calculated pressure profile corresponding to abackside-gap of d_(b)=0.0004 inch and a source pressure of 0.043 psi. Itcan be seen that the pressure is substantially uniform over 90% of thelength of the bearing. The normal direction stiffness of the porousmembrane of Inventive Example #11 is approximately 31 lb per inchdeflection.

Table 1 summarizes the operating conditions and results for InventiveExamples #1 to #11. As described earlier, some of the operatingconditions are dependent variables whose values depend upon thespecified conditions and the independent variable settings. In thosecases, the dependent variable settings are noted as “calculated.” The“Pressure Profile Quality” column is a subjective rating based upon theuniformity of the pressure between the output face 41 and the secondsurface 51 of the substrate 97. When the pressure is uniform to within5% across at least 80% of a width of the output face, the PressureProfile Quality is classified as “Very Good;” when the pressure isuniform to within 15% across at least 80% of a width of the output face,the Pressure Profile Quality is classified as “Good;” when the pressureis uniform to within 15% across at least 60% of a width of the outputface, the Pressure Profile Quality is classified as “Fair;” and when theuniformity of the pressure is worse than 15% across at least 60% of awidth of the output face, the Pressure Profile Quality is classified as“Poor.” It can be seen that the configurations that produce “Good” or“Very Good” results are those that include porous membranes with apermeability-to-thickness ratio (k/t) of greater than 1×10⁻⁹ inches.

TABLE 1 Membrane Membrane Porous Source Backside Pressure PermeabilityThickness Membrane Pressure Gap Profile Example (inch²) (inch) k/t(inch) (psi) (inch) Quality #1 2.2 × 10⁻¹¹ 0.125 1.72 × 10⁻¹⁰ 0.040.0046 Poor #2 4.0 × 10⁻¹² 0.031 1.29 × 10⁻¹⁰ calculated 0.0004 Fair #34.0 × 10⁻¹² 0.062 6.45 × 10⁻¹¹ calculated 0.0004 Poor #4 4.0 × 10⁻¹²0.125 3.20 × 10⁻¹¹ calculated 0.0004 Poor #5 4.0 × 10⁻¹² 0.188 2.13 ×10⁻¹¹ calculated 0.0004 Poor #6 4.0 × 10⁻¹² calculated calculated 0.080.0004 Poor #7 4.0 × 10⁻¹² calculated calculated 0.07 0.0004 Poor #8 4.0× 10⁻¹² calculated calculated 0.06 0.0004 Poor #9 4.0 × 10⁻¹² calculatedcalculated 0.05 0.0004 Fair #10 4.0 × 10⁻¹⁰ 0.125 3.20 × 10⁻⁹  0.200.0004 Good #11 2.5 × 10⁻¹¹ 0.015 1.43 × 10⁻⁹   0.043 0.0004 Very good

The gas-bearing backers 40 of the present invention operate at asurprisingly reduced source pressure, three orders of magnitude lessthan normal gas bearing practice. Preferably, the gas-bearing backers 40include porous membranes that are thin and are constructed from amaterial such as porous graphite. Given the thickness and the porousnature of the preferred porous membranes, there are structural factorsthat need to be considered for the design of these membranes to providethe necessary performance and durability. In an exemplary embodiment, toprevent bursting and excessive out of plane deflection of the porousmembrane (which would compromise the ability to achieve uniformbackside-gaps), a ribbed supporting structure, including a series ofribs 47 and grooves 48, is machined into a monolithic graphite block tofabricate a porous material layer 42 which includes the porous membrane49 as shown in FIG. 17. (The portion of the porous material layer 42below the bottom of the grooves 48 functions as the porous membrane 49.)

A porous material layer 42 corresponding to the porous membrane 49 wasconstructed having the rib structure illustrated in FIG. 17 to providean embodiment of Inventive Example #12. A 0.100 inch thick block ofElectro Carb EC-12 graphite was machined to have a repeating ribstructure with 0.070 inch wide grooves 48 and 0.030 inch wide ribs 47,providing a porous membrane at the bottom of each groove 48 having athickness of approximately 0.030 inch. The rib width was advantageouslychosen to be within a factor of 2× of the porous membrane thickness(i.e., between 50% and 200% of the porous membrane thickness) at thebottom of the grooves 48. As such, the flow of gas supplied to a groove48 is able to diffuse diagonally beneath the ribs 47 (from both sides)without excessive path length increase compared to the normal flow path,and exits the output face 41 with nearly uniform flow and minimumdisturbance from the rib structure.

The machined porous material layer 42 was installed in a pocket on thebottom surface of an aluminum backer housing 43 and permanentlyattached. The backer housing 43 included a gas manifold 44 with across-groove 46 running perpendicular to the ribbed structure so thatthe pressurized gas supplied by the gas source is distributed to each ofthe grooves in the porous material layer 42, and thus to the entirebearing area. The aluminum body was constructed such that the net weightof the gas-bearing backer 40 was 0.200 lb, matching the weight of thevacuum backer device 70 of the previously-discussed Comparative Example,such that the average pressure imparted by the gas-bearing backer 40 tothe substrate 97 is the same as the load imparted by the vacuum backerdevice 70. The output face of the graphite block was lapped afterassembly to achieve flatness better than 10 μm. After the lappingoperation, the membrane thickness was reduced somewhat such that it wasabout 0.015-0.030 inch (with a nominal thickness of 0.015 inchcorresponding to Inventive Example #11). The ribbed supporting structureprovides the additional advantage that they enable a larger area forthermal contact between the porous material layer 42 and the backerhousing 43.

As discussed earlier, the gas-bearing backer 40 is adapted for use in anSALD deposition system in combination with a high-stiffness gas bearingdeposition head 30. The ribs 47 of the gas-bearing backer 40 can beoriented at any angle with respect to the elongated slots in the outputface 134 of the deposition head 30, and can be arranged to be parallel,perpendicular, or any intermediate angle. An operational test wasconducted using a vacuum-preloaded gas-bearing SALD deposition head 30,a 3 mil Kapton substrate 97, and the described gas-bearing backer 40 ofInventive Example #12. The source pressure provided to the gas-bearingbacker 40 was adjusted to lift the backside-bearing by 0.0002 inch (5um) from the second surface 51 of the substrate 97. The operational testshowed no evidence of contact on either side of the substrate 97, atboth static conditions and as the substrate 97 was translated laterallybetween the gas-bearing backer 40 and deposition head 30.

The gas-bearing backer 40 of the present invention is able to supportmoment loads, allowing the gas-bearing backer 40 to be self-supportedabove the substrate 97 without danger of tipping or touching thesubstrate surface. The gas-bearing backer 40 has the ability to flattencorrugations in the substrate 97 caused by bending moments resultingfrom forces acting on the process-side (i.e., first side 50) of thesubstrate 97, such as the saw tooth pressure profile associated withgas-bearing SALD deposition heads 30. The porous material layer 42 ofthe gas-bearing backer 40 is porous on a microscopic scale, much smallerthan the thickness of the porous material layer 40. This has the effectof the gas-bearing backer 40 acting as a multitude of tiny bearings thatcan respond to deviations in the backside-gap on a local scale;advantageously the local scale (e.g., the pore size and distribution ofthe porous membrane) of the gas-bearing backer 40 is smaller than thepitch of the gas slots in the SALD gas-bearing deposition head 30. Thusthe gas-bearing backer 40 provides pressure preferentially on the highpoints of any substrate corrugations, reducing the amplitude of thecorrugations.

The gas-bearing backer 40 functions without contacting the substrate 97.While the net stiffness of the gravity-loaded gas-bearing backer 40 ofthe present invention is zero, due to its ability to seek an equilibriumposition without other restraint, the local stiffness between thesubstrate and backside-bearing backer face is not zero and is on theorder of 31 lb/in over the deposition head area, as was described withrespect to Inventive Example #11.

In SALD systems, the substrate 97 is confined between the gas-bearingbacker 40 and the deposition head 30. In this configuration, any out ofplane excursions must be less than the gap between the deposition head30 and the gas-bearing backer 40, minus the substrate thickness (i.e.the sum of the backside-gap d_(b) and the process process-gap d_(p)measured at a common point on the substrate 97). In order to compensatefor any corrugation in the substrate 97 caused by the pressuredistribution of the deposition head 97 or substrate features deviations,the gas-bearing backer 40 provides a locally differential force on thesubstrate surface, resulting in a pressure distribution which acts toflatten the substrate 97. The ability of the gas-bearing backer 40 toprovide this differential force locally to the substrate 97 isinfluenced by the ability to exhaust gas from substrate areas that arerelatively far, in the normal direction, from the gas-bearing backer 40(such as the valleys of corrugation or dimples in the substrate). Inembodiments where the gas-bearing backer 40 is used in conjunction witha gas-bearing SALD deposition head 30, the linear arrangement of the gasslots in the deposition head 30 can impart an out-of-plane distortion(i.e., corrugation) in the substrate 97 with continuous valleys allowinggases to exhaust to the edges of either the substrate 97 or thegas-bearing backer 40. In wide-SALD systems, the width of thegas-bearing backer 40 will be approximately the same as the width of thedeposition head 30. Under conditions where the substrate 97 isdistorted, the valley can extend the full width of the substrate 97, andthe ability to vent the gas supplied by the gas-bearing backer 40 in acentral region between the gas-bearing backer 40 and the substrate 97becomes increasingly restrictive with increasing substrate width.

In some embodiments, improved venting is achieved by providing ventgrooves 55 in the output face 41 of the gas-bearing backer 40 asillustrated in FIG. 18. In the illustrated configuration, the ventgrooves 55 are located coincident with the ribs 47 in the porousmaterial layer 42 so that gas conductance directly from the interior ofthe gas-bearing backer 40 to the vent grooves 55 (i.e., internalleakage) is reduced. The rib width in this embodiment may beadvantageously made thicker than that given by the ratio described inExample #12 to reduce diagonal diffusion into the grove. In a preferredarrangement, the surfaces of the vent grooves 55 are treated to benon-porous, as illustrated in FIG. 19. One example process for treatingthe vent grooves 55 is illustrated in FIG. 20A. In a first step, theentire porous surface is rendered impermeable by a coating process asshown in FIG. 20A, which applies a coating 58 over the output face 41.Subsequently, portions of the coating 58 are removed from the land areas56 of the output face 41 (for example, using a lapping operation) torestore local gas conductance through the land areas, resulting in thestructure for the porous material layer 42 illustrated in FIG. 20B.

FIGS. 21A and 21B show different views of the same porous material layer42 having vent grooves 55 and land areas 56 on an output face 41,Supporting ribs 47 and grooves 48 are formed on the opposite face, withan array of blind holes 57 extending from the bottom of the grooves 48partway through the remaining thickness of the porous material layer 42.In this case, the thickness of the porous material layer 42 between thebottom of the blind holes 57 and the output face 41 can be considered tobe thickness of the porous membrane. The illustrated cross hatchedarrangement of the vent grooves 57 results in an array of diamond shapedland areas 56. The blind holes 57 are preferably located in the centerof these land areas 56. In an exemplary arrangement, the blind holes 57are formed by drilling from the interior side of the porous materiallayer 42 without breaking through the output face 41. The diameter anddepth of the blind holes 57, and the pitch of the vent grooves 55, areco-designed to allow the majority of the source gas to be emitted viathe land areas 56, thus providing local lift. The diamond arrayillustrated in FIG. 21A serves to establish a multitude of co-planarnodes. Local beam stiffness of the substrate 97 contributes tominimizing deflection between nodes. This minimization of deflection isadvantageous when using low stretch substrates 97, which are known tonot ‘like” to form compound curvatures (i.e., it resists the formationof compound curvatures due to corresponding increase in strain energy).

In some embodiments of the present invention, the lateral constraintsystem 53 uses flexures 284 for constraining the x, y, and theta zposition of the gas-bearing backer 40 over the output face 134 of thedeposition head 30 as illustrated in FIGS. 22A and 22B. In someembodiments, the flexures 284 can comprise sheet or wire elements. Theflexures 284 can be provided by a single planar sheet or two parallelsheets joined by a common rigid member. In this embodiment, theattachment of the “free end” of the flexures 284 to the gas-bearingbacker 40 is by means of bosses having surfaces aligned with the axis ofthe center of gravity 72 of the gas-bearing backer 40. The plane of theflexures 284 is parallel to the output face 134 of the deposition head30. The “fixed” end of the flexures 284 is attached to a bracket 291 ona backer positioner 290, which can also be considered to be componentsof the lateral constraint system 53. The lateral constraint system 53 isattached directly or indirectly to a fixed base or pedestal depending onthe specific requirements of the SALD system. FIG. 22A illustrates theuse of flexures in a vertically-oriented SALD system, while FIG. 22Billustrates a similar system having a horizontal orientation. Asdiscussed earlier, in the horizontal configuration of FIG. 22B, theweight of the gas-bearing backer 40 provides a downward force on thegas-bearing backer 40 that is passed on to the substrate 97. In thevertical orientation of FIG. 22A, a constant horizontal force F is shownthat serves the same function; this force can be provided using anyforce mechanism known in the art such as that discussed with referenceto FIG. 10.

Alternative embodiments providing equivalent constraint utilize threewire flexures 284, where two of the flexures 284 are located in theplane of the center of gravity 72 of the gas-bearing backer 40 andoriented parallel to the output face 134 of the deposition head 30.These flexures 284 constrain motion in x and yaw. A third flexure 284(not shown) is arranged in the direction parallel to the output face 134of the deposition head 30 and perpendicular to the primary motion axis(i.e., the x-axis), intersecting the center of gravity 72 of thegas-bearing backer 40 in a plane parallel to the first flexures 284, andis preferably in the same plane as the first flexures 284. This thirdflexure 284 constrains the gas-bearing backer 40 from translation in y.The necessary degrees of freedom to allow equilibration of thegas-bearing backer 40 relative to the substrate 97 and the output face134 of the deposition head 30, including pitch, roll, and translation inz, are advantageously preserved in this alternative embodiment.

In some embodiments of the present invention, the gas-bearing backer 40provides heat to the substrate 97. In such embodiments, in addition tosupporting the gas-bearing backer 40 the flexures 284 may advantageouslybe utilized to deliver electrical energy or fluid flows. In oneembodiment, two parallel sheet metal flexures 284 are utilized toprovide electrical current to heater elements or thermo-electric Peltiermodules incorporated in the gas-bearing backer 40. Suitable conductiveand insulating materials are used as necessary to define the currentflow. In some configurations, electrically resistive properties of theporous membrane 49 may be used as a heating element.

In another embodiment, two of the wire flexures 284 are used to sourceand sink electrical energy while the third flexure 284 is tubular and isused to convey gas to the output face 41 of the gas-bearing backer 40.The straight path of the gas supply tube avoids disturbing forces causedby Bourdon tube effects (i.e.: forces due to pressure applied to unequalareas on inside or outside of bends).

The electrical energy conveyed to the backer may be modulated as a meansto communicate process conditions between the gas-bearing backer 40 andthe modular system control by means known to one skilled in electronics.Properties and process conditions that can be communicated includetemperature, pressure, gap height, and sample presence. The gas-bearingbacker 40 may include sensors and signal conditioning electronics inthese embodiments. In some embodiments, communication can beaccomplished by means of RF or optical links. While as described theflexures 284 are clear implementations of the necessary functionality,they are not exhaustive of the possible arrangements that could providesimilar intent which are also included within the scope of the presentinvention.

In the case where a substrate 97 is rigid and the deposition head isvacuum-preloaded, the deposition head 30 determines the planar alignmentof the substrate 97 without the assistance of a backing device, providedthat the center of gravity of the substrate is not overhung by anexcessive distance (beyond the tipping point as described incommonly-assigned, co-pending U.S. patent application Ser. No.15/458,250 to Spath et al., entitled “Deposition system with vacuumpre-loaded deposition head,” which is incorporated herein by reference).There are several reasons why a gas-bearing backer 40 (i.e., agas-levitated backing device), which is constrained in the planeparallel to the output face 134 of the deposition head 30 and freelymoveable to seek equilibrium in the normal direction, may provideadditional utility. The gas-bearing backer 40 can provide a non-contactforce vector directed toward the center of the deposition head 30 thatwill allow the substrate 97 to be translated in the in-track directionby a greater distance before reaching the tipping point, and thus allowfor larger substrates 97 to be coated. The gas-bearing backer 40 mayalso be used as passive insulation to prevent heat loss from thesubstrate 97. Furthermore, the gas-bearing backer 40 may act as anon-contact heat source for transfer of thermal energy to the substrate97.

For the case where the substrate 97 is rigid, the gas-bearing backer 40does not need to provide a substrate flattening function, and thegas-bearing backer 40 does not need to be responsive to substratedistance variations in local areas over the full output face 41. Inother words, the gas-bearing backer 40 does not need to behave as amultitude of tiny independently stiff bearings. Local stiffness isnecessary for flexible substrates, and is a primary motivator for theuse of the gas-bearing backer 40 described relative to FIG. 11 and FIGS.13-21B including a porous material layer 42 to provide a substantiallyuniform pressure profile such as that shown in FIG. 16. Without thisrequirement, additional options are available for the design of thegas-bearing backer 40 for the case of a rigid substrate 97. Note thatgas-bearing backers 40 using a porous membrane 49 are still applicablehowever. In which case certain examples that are not well suited forflexible substrates 97 are useful for rigid case (e.g., where thepermeability-to-thickness ratio K/t<1×10⁻⁹ inches).

FIG. 23A shows a cross-section through one such example of a gas-bearingbacker 40 which has an output face 41 having a plurality of outputopenings 39 through which a gas flow is provided from a gas source 38 tolevitate the gas-bearing backer 40 over the substrate 97. Each of theoutput openings 39 effectively serves as an individual gas bearing. Alateral constraint system 53 (e.g., a frame) constrains lateral movementof the gas-bearing backer 40, while enabling it to freely move in adirection normal to the second surface 51 of the substrate 97.

As discussed previously, a single non-porous gas-bearing is sensitive todisruptions in lifting force when tipped. Basic geometry requires threepoints to determine a plane. A gas-bearing backer 40 can be constructedof non-porous material, such as aluminum, wherein three or more gasopenings 39 are incorporated in a non-co-linear pattern. For example,the pattern may be three gas openings 39 in an equi-spaced polar arrayabout a vertical axis passing through the center of gravity of thegas-bearing backer 40 (i.e., at the apexes of an equilateral triangle)as illustrated in the plan view shown in FIG. 23B. (The cross-section ofFIG. 23A is taken through the line A-A′ of FIG. 23B.)

Note that for the case of a gas-bearing backer 40 having a porousmembrane 49, the pores in the porous membrane provide the outputopenings 39. It will be obvious to one skilled in the art that a widerange of variations can be used ranging between the three output opening39 configuration of FIGS. 23A-23B to the porous membrane configurationswhich have a large number of output openings 39. Alternate embodimentscan include a regular or irregular array including any number three ormore output openings 39.

Preferably at least one additional non-collinear output opening 39 wouldexist in a plane parallel to the illustrated cross-section. The body ofthe gas-bearing backer 40 is comprised of a monolithic block ofnon-porous material (e.g., aluminum) having a weight corresponding tothe desired down force to be imparted to the rigid substrate 97.Pressurized gas from a gas source 38 is supplied to the gas-bearingbacker 40 through a single gas port 37. Individual independent gasbearings are located coincident with output openings 39 on the outputface 41. The output face 41 of the gas-bearing backer 40 may be slightlyrelieved to better define the discrete land areas surrounding the outputopenings 39, where the pressure of the supplied gas acts to providelevitation. The output openings 39 have compensating orifices 36 whichcause the exhaust pressure at the individual output openings 39 to dropas the gap between the land area of the output face 41 and the substrate97 increases, leading to stability in the gap distance. The gas-bearingbacker 40 as described is sufficient to impart non-contact normal forceto a substrate 97.

As discussed previously, heat transfer by conduction through asufficiently thin levitating gas film is an effective means of heating asubstrate 97. To provide a substrate heating functionality, a heater 45is attached to, or integrated within, the body of the gas-bearing backer40. As discussed earlier, in an exemplary embodiment the heater 45 is anelectric resistive cartridge heater. In other embodiments, anyappropriate type of heater 45 known in the art can be used, such asthose that were previous discussed. The energy can be conveyed to theheater 45 by any appropriate means, such as those that were previouslydiscussed means. In some embodiments, the heater 45 can be external tothe gas-bearing backer 40. In other embodiments, the heater can beinternal to the gas-bearing backer 40.

For heat transfer effectiveness (i.e., reducing thermal resistance), itis preferable that the thermal gap (i.e., the physical gap whereinthermal energy is transferred by means of conduction through thelevitating gas) between the gas-bearing backer 40 and the substrate 97be no more than 100 μm, and more preferably no more than 50 μm. The gassupply pressure, compensating orifice, and land area are chosen suchthat the gap between the land areas surrounding output openings 39 andthe substrate 97 is a fraction of the preferred thermal gap. The reliefof the output face 41 of the backer, non-inclusive of the land areas, ispreferably small such that the total gap between the backer reliefsurfaces and the substrate is no more than the preferred thermal gap.

The non-contact heated gas-bearing backer 40 as just described isadvantaged over known substrate heat transfer devices because it iscontinuously self-adjusting and is able to maintain a consistent thermalgap, closer than would be achievable with rigidly mounted heaters, for awide range of substrates having thickness variations that aresignificantly larger than the desired thermal gap.

In arrangements such as that shown in FIGS. 23A-23B, thevacuum-preloading of the deposition head 30 provides stiffness to theposition of the substrate 97 in the z-direction relative to the outputface 134 of the deposition head 30. It is possible in some applicationsto not utilize vacuum as the primary or sole preloading means. Theweight of the non-contact gas-bearing backer 40, or a force imparted toit, may be used in conjunction with the deposition head 30 flowcharacteristics to reduce the fly height (gap) on the deposition side ofthe substrate 97 and correspondingly increase stiffness while preservingnon-contact transport. The gas-bearing backer 40 can provide heatingfunctionality by maintaining a small conduction thermal resistance bymeans of a small physical gap (e.g., less than 100 μm, and preferablyless than 50 μm), and by incorporating a heater 45 with the devicegas-bearing backer 40.

The invention has been described in detail with particular reference tocertain preferred embodiments thereof, but it will be understood thatvariations and modifications can be effected within the spirit and scopeof the invention.

PARTS LIST

-   15 external environment-   30 deposition head-   36 compensating orifice-   37 gas port-   38 gas source-   39 output opening-   40 gas-bearing backer-   41 output face-   42 porous material layer-   43 backer housing-   44 gas manifold-   45 heater-   46 cross-groove-   47 ribs-   48 grooves-   49 porous membrane-   50 first surface-   51 second surface-   53 lateral constraint system-   55 vent groove-   56 land area-   57 blind hole-   58 coating-   60 mass-   61 lever-   62 pivot point-   70 backer device-   72 center of gravity-   73 heater-   74 substrate unit-   80 gas delivery zone-   97 substrate-   98 motion arrow-   110 gas slot-   112 output slot-   114 exhaust slot-   134 output face-   200 SALD system-   205 deposition subsystem-   210 deposition unit-   270 relative motion means-   280 substrate positioner module-   284 flexure-   290 backer positioner-   291 bracket-   305 deposition zone-   308 inert zone-   309 inert zone-   313 first reactive gas zone-   314 purge zone-   315 second reactive gas zone-   321 left edge-   322 right edge-   401 output slots

The invention claimed is:
 1. A gas-levitated substrate backing systemfor providing heat and a non-contact force onto a surface of asubstrate, comprising: a gas-levitating backer structure having anoutput face, wherein the output face includes three or more outputopenings; a gas source for providing a gas flow through the outputopenings; and a heater for heating the gas-levitating backer structure;a lateral constraint system that constrains the movement of thegas-levitating backer structure in a plane parallel to the surface ofthe substrate while enabling the gas-levitating backer structure to movein a direction normal to the surface of the substrate; wherein thegas-levitating backer structure fits within an opening in the lateralconstraint system or the lateral constraint system includes a flexureattached to the gas-levitating backer structure; wherein the gas flowthrough the output face is controlled to lift the gas-levitating backerstructure away from the surface of the substrate such that there is nomechanical contact between the gas-levitating backer structure and thesurface of the substrate while providing the non-contact force onto thesurface of the substrate, and wherein a gap between the output face andthe surface of the substrate is controlled by the gas flow.
 2. Thegas-levitated substrate backing system of claim 1, wherein thegas-levitating backer structure includes a porous material layer of aporous material, the porous material layer having an outer surfacefacing the surface of the substrate and an inner surface facing a gasmanifold, wherein pores in the porous material provide the outputopenings, and wherein the output face corresponds to the outer surfaceof the porous material layer.
 3. The gas-levitated substrate backingsystem of claim 1, wherein the gas-levitating backer structure heats thesurface of the substrate by conductive heating.
 4. The gas-levitatedsubstrate backing system of claim 1, wherein the gas flow through theoutput face is controlled such that a gap between the output face andthe surface of the substrate is no more than 50 μm.
 5. The gas-levitatedsubstrate backing system of claim 1, wherein the flexure includes ameans for conveying energy to the gas-levitating backer structure orconveying electrical signals to or from the gas-levitating backerstructure.
 6. The gas-levitated substrate backing system of claim 1,wherein the lateral constraint system includes a gas supply tube whichsupplies gas to the gas-levitating backer structure.
 7. Thegas-levitated substrate backing system of claim 1, wherein thenon-contact force applied to the surface of the substrate is no morethan 1.0 pounds per square inch of the output face.
 8. The gas-levitatedsubstrate backing system of claim 1, wherein the surface of thesubstrate is oriented in a horizontal orientation.
 9. The gas-levitatedsubstrate backing system of claim 8, wherein the gas-levitating backerstructure applies a net force on the surface of the substratecorresponding to a weight of the gas-levitated substrate backing system.10. The gas-levitated substrate backing system of claim 1, furtherincluding a vacuum-preloaded gas bearing having an output face, thevacuum-preloaded gas bearing being positioned in a fixed location on anopposite side of the substrate from the gas-levitating backer structurewith the output face of the vacuum-preloaded gas bearing facing theopposite side of the substrate.
 11. The gas-levitated substrate backingsystem of claim 10, wherein the vacuum-preloaded gas bearing is a thinfilm deposition head which deposits a thin film of material onto theopposite side of the substrate.
 12. The gas-levitated substrate backingsystem of claim 1, further including a substrate positioning system thatmoves the substrate in a lateral direction parallel to the output faceof the gas-levitating backer structure according to a specified motionpattern.
 13. The gas-levitated substrate backing system of claim 1,wherein the heater is a resistive heater.
 14. The gas-levitatedsubstrate backing system of claim 1, wherein the heater is inside thegas-levitating backer structure.
 15. The gas-levitated substrate backingsystem of claim 1, wherein a surface area of the substrate is greaterthan an area of the output face.